, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA1907 description ? collector-emitter breakdown voltage- v(br)ceo= -sov(min) ? good linearity of hfe ? complement to type 2sc5099 applications ? designed for audio and general purpose applications absolute maximum ratings(ta=25r) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value -80 -80 -6 -6 -3 60 150 -55-150 unit v v v a a w 'c r 1 2 3 pin 1.base 2.collector 3. emitter to-3pml package a so >} ,,-, (5)11 ' ; ;: ' ig) "v-, ? 1u i :; i:. f ) r f\- dim a b c d f g h j k l n u r s u y z mm mim mm 19,90 15.90 5.50 0.90 3.30 2.90 5.90 0.595 22,30 1.90 10.80 4.90 3.75 3.20 9.90 4.70 1.90 max 20.10 16.10 5,70 1.10 3.50 3.10 6.10 0.605 22.50 2.10 11.00 5.10 3.95 3.40 10.10 4.90 2.10 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify (hat datasheets nre current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1907 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo vce(sat) icbo iebo hfe cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain collector output capacitance current-gain ? bandwidth product conditions lc= -50ma; le= 0 lc= -2a; ib= -0.2a vcb= -80v; ie= 0 veb= -6v; lc= 0 lc= -2a; vce= -4v ie=0; vcb=-10v;f=1mhz ie=0.5a;vce=-12v win -80 50 typ. 150 20 max -0.5 -10 -10 unit v v ua ua pf mhz switching times ton tstg tf turn-on time storage time fall time ic=-3a, rl=10fi, |b1=.|b2=-0.3a, vcc= -30v 0.18 1.10 0.21 u s u s u s classifications o 50-100 p 70-140 y 90-180
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